共 50 条
- [2] Introduction Rates of Electrically Active Radiation Defects in Proton Irradiated n-Type and p-Type Si Monocrystals [J]. Journal of Electronic Materials, 2023, 52 : 7861 - 7868
- [3] POSITRON LIFETIME MEASUREMENTS IN N-TYPE AND P-TYPE SILICON [J]. APPLIED PHYSICS, 1974, 4 (03): : 271 - 272
- [4] THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02): : 601 - 610
- [8] Exploring the formation of intrinsic p-type and n-type defects in CuO [J]. PHYSICAL REVIEW MATERIALS, 2020, 4 (07):
- [10] HOLE CONDUCTIVITY AND FORMATION OF DEFECTS IN N-TYPE AND P-TYPE LEAD SELENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (10): : 1144 - 1147