Enhancement of the hole photocurrent in layers of Ge/Si quantum dots with abrupt heterointerfaces

被引：0

作者：

Yakimov, A. I. ^{[1
,2
]}

Kirienko, V. V. ^{[1
]}

Armbrister, V. A. ^{[1
]}

Dvurechenskii, A. V. ^{[1
,3
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Tomsk State Univ, Tomsk 634050, Russia

[3] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 2016年 / 104卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

RAMAN-SPECTROSCOPY DATA; INFRARED PHOTODETECTORS; PHOTOCONDUCTIVE GAIN; GE; NANOSTRUCTURES; ISLANDS; SI;

D O I：

10.1134/S0021364016190140

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The photoconductive gain, hole photocurrent spectra in the mid-infrared range, and band-to-band photoluminescence spectra in arrays of Ge/Si quantum dots with different elemental compositions of the heterointerface are measured. The diffusive mixing of the materials of the matrix and the dots is controlled by varying the temperature at which the Ge layers are overgrown with Si. It is found that the formation of abrupt heterointerfaces leads to the enhancement of the hole photocurrent and quenching of photoluminescence. The results are explained by an increase in the lifetime of nonequilibrium holes owing to the suppression of their capture into the bound states of quantum dots.

引用

页码：479 / 482

页数：4

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