Vertical and lateral mid-infrared photocurrent study on Ge quantum dots in Si

被引：0

作者：

Miesner, C ^{[1
]}

Brunner, K ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 224卷 / 02期

关键词：

D O I：

10.1002/1521-3951(200103)224:2<605::AID-PSSB605>3.0.CO;2-V

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper we discuss photocurrent measurements in normal incidence geometry performed on sell-assembled Ge dots in Si. The "classical" detector concept with vertical photocurrent is compared to a new one which is based on in-plane photoconductivity and is only realizable with dots. The active region of the samples consists of ten layers of Ge dots formed by self-assembly in the Stranski-Krastanov growth mode with lateral dimensions of about 20 nm and a height of about 1.5 nm. The mid-infrared photocurrent measurements show the typical line shape of bound-to-con tinuum transitions. The responsivity of the lateral device of 10 mA/W is about twice that of the vertical structure, furthermore the peak maximum at 284 meV is shifted by about 40 meV towards smaller energies. This is explained using a model involving carrier transfer to the modulation doping layer.

引用

页码：605 / 608

页数：4

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