A resonant high side gate driver for low voltage applications

被引：4
|
作者：
Dwane, P [1 ]
O'Sullivan, D [1 ]
Egan, MG [1 ]
机构：
[1] Natl Univ Ireland Univ Coll Cork, PEI Technol, Cork, Ireland
来源：
2005 IEEE 36TH POWER ELECTRONIC SPECIALISTS CONFERENCE (PESC), VOLS 1-3 | 2005年
关键词：
resonant gate drive; high frequency; dc-dc conversion;
D O I：
10.1109/PESC.2005.1581903
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper aims to provide a practical insight into the use of a novel resonant gate drive system to efficiently drive both the power switches in a switched mode power supply, without the requirement for level shifting or bootstrapping circuitry. At present there are two popular methods to drive high side N-channel devices in low voltage applications. The circuit presented here overcomes the limitations of these solutions without a part number proliferation. The theoretical characteristics of the topology are examined in a detailed mathematical analysis suite. Simulation and experimental results emphasize the advantages of the proposed topology.
引用
收藏
页码：1979 / 1985
页数：7
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