LOW SIDE GAN FET DRIVER FOR SPACE APPLICATIONS

被引：2
|
作者：
Mansilla, O. E. [1 ]
Broline, J. [1 ]
Satterfied, H. [1 ]
Pearce, L. G. [1 ]
Thomson, E. J. [1 ]
机构：
[1] Intersil Corp, 1650 Robert J Conlan BLVD, Palm Bay, FL 32905 USA
来源：
11TH EUROPEAN SPACE POWER CONFERENCE | 2017年 / 16卷
关键词：
D O I：
10.1051/e3sconf/20171612006
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
This paper reports the results of preliminary single event effects (SEE) testing of the Intersil ISL70040SEH, a single low side driver specifically designed to drive enhancement mode power GaN FETs.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Smart FET driver emulates rectifier in secondary-side applications
    Rako, Paul
    [J]. EDN, 2010, 55 (07) : 11 - 11
  • [2] A Resonant Gate Driver with Variable Gain and a Capacitively Decoupled High-Side GaN-FET
    Ellis, Nathan Miles
    Sousa, Evan
    Amirtharajah, Rajeevan
    [J]. 2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2020, : 3793 - 3797
  • [3] A resonant high side gate driver for low voltage applications
    Dwane, P
    O'Sullivan, D
    Egan, MG
    [J]. 2005 IEEE 36TH POWER ELECTRONIC SPECIALISTS CONFERENCE (PESC), VOLS 1-3, 2005, : 1979 - 1985
  • [4] GaN Nanotube FET With Embedded Gate for High Performance, Low Power Applications
    Han, Ke
    Li, Jiawei
    Deng, Zhongliang
    Zhang, Yannan
    Long, Shanglin
    [J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 : 925 - 929
  • [5] GaN FET-based, scalable DCDC converter development for space and stratospheric applications
    Bago, Laszlo
    Szabo, Norbert
    Czifra, David
    Szimler, Andras
    Molodih, Johanna
    Kishazi, Csaba
    Veres-Vitalyos, Aron
    Oliver, Jesus
    [J]. 2023 13TH EUROPEAN SPACE POWER CONFERENCE, ESPC, 2023,
  • [6] Side gate AlGaN/GaN FET on silicon and sapphire
    Hiller, Lars
    Tonisch, Katja
    Pezoldt, Joerg
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, 2014, 11 (02): : 280 - 283
  • [7] Design of a low temperature drift undervoltage lockout circuit -Used for GaN FET power driver IC
    Guo Weiling
    Du Shuai
    Bai Changqing
    Lei Liang
    Zhu Yanxu
    [J]. 2018 15TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS), 2018, : 46 - 49
  • [8] Design of Dopingless GaN Nanowire FET with Low 'Q' for High Switching and RF Applications
    Singh, Sarabdeep
    Raman, Ashish
    [J]. SILICON, 2022, 14 (03) : 1297 - 1307
  • [9] Design of Dopingless GaN Nanowire FET with Low ‘Q’ for High Switching and RF Applications
    Sarabdeep Singh
    Ashish Raman
    [J]. Silicon, 2022, 14 : 1297 - 1307
  • [10] Optimizing performance of a pulsed laser diode driver based on a GaN FET
    Glaser, John
    [J]. 2019 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2019), 2019,
12345