Single Electron Gating of Topological Insulators

被引：7

作者：

Sessi, Paolo ^{[1
]}

Bathon, Thomas ^{[1
]}

Kokh, Konstantin Aleksandrovich ^{[2
,3
,4
]}

Tereshchenko, Oleg Evgenievich ^{[3
,4
,5
]}

Bode, Matthias ^{[1
,6
]}

机构：

[1] Univ Wurzburg Hubland, Expt Phys 2, Phys Inst, D-97074 Wurzburg, Germany

[2] Russian Acad Sci, Siberian Branch, VS Sobolev Inst Geol & Mineral, Novosibirsk 630090, Russia

[3] Novosibirsk State Univ, Dept Phys, Novosibirsk 630090, Russia

[4] St Petersburg State Univ, St Petersburg 198504, Russia

[5] Russian Acad Sci, Siberian Branch, AV Rzanov Inst Semicond Phys, Novosibirsk 630090, Russia

[6] Wilhelm Conrad Rontgen Ctr Complex Mat Syst RCCM, D-97074 Wurzburg, Germany

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 45期

关键词：

SPIN TEXTURE; SPINTRONICS; SURFACE; SEMICONDUCTORS; TRANSISTOR; NANOSCALE; MOLECULES; DOPANTS; STATES;

D O I：

10.1002/adma.201602413

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effective gating of topological insulators is demonstrated, through the coupling of molecules to their surface. By using electric fields, they allow for dynamic control of the interface charge state by adding or removing single electrons. This process creates a robust transconductance bistability resembling a single-electron transistor. These findings make hybrid molecule/topological interfaces functional elements while at the same time pushing miniaturization to its ultimate limit.

引用

页码：10073 / 10078

页数：6

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