Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

被引：25
|
作者：
Liu, Kendrick X. [1 ]
Zhang, X. [2 ]
Stahlbush, R. E. [1 ]
Skowronski, M. [2 ]
Caldwell, J. D. [1 ]
机构：
[1] USN, Res Lab, 4555 Overlook Ave,SW, Washington, DC 20375 USA
[2] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷
关键词：
Photoluminescence (PL); luminescence imaging; luminescence spectra; dislocations; partial dislocations; threading dislocations; threading edge dislocations; threading screw dislocations; extended defects; silicon carbide; SiC; 4H-SiC; DIODES;
D O I：
10.4028/www.scientific.net/MSF.600-603.345
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Material defects such as Si-core and C-core partial dislocations (PDs) and threading screw dislocations (TSDs) and threading edge dislocations (TEDs) are being investigated for their contributions to device performances in 4H-SiC. Non-destructive electroluminescence and photo luminescence techniques can be powerful tools for examining these dislocations. In this report, these techniques were used to reveal the different spectral characteristics for the mentioned dislocations. At higher injection levels, both the Si-core and C-core PDs possessed a spectral peak at 700 nm. However, at lower injection levels, the spectral peak for the Si-core PD remained at 700 nm while the peak for the C-core moved to longer wavelengths. For the threading dislocations, TSDs possessed a peak between 800 and 850 nm while the TEDs possessed a peak at 600 nm independent of the injection levels.
引用
收藏
页码：345 / +
页数：2
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