Physical mechanisms of surface terahertz emission from semiconductors

被引：0
|
作者：
Krotkus, A. [1 ]
Arlauskas, A. [1 ]
Adomayicius, R. [1 ]
Nevinskas, I. [1 ]
Malevich, V. L. [2 ]
机构：
[1] Ctr Phys Sci & Technol, Sauletekio Av 3, LT-10223 Vilnius, Lithuania
[2] Natl Acad Sci Belarus, Inst Phys, Nezalezhnasti Av 68, Minsk 220072, BELARUS
来源：
TERAHERTZ EMITTERS, RECEIVERS, AND APPLICATIONS VII | 2016年 / 9934卷
关键词：
Narrow gap semiconductors; terahertz emission; femtosecond laser; RADIATION; INAS; DEPENDENCE;
D O I：
10.1117/12.2242113
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Microscopic origin of THz emission from femtosecond laser excited narrow gap semiconductor surfaces is explained in terms of the photoelectron ballistic movement in non-parabolic and anisotropic conduction band. It has been shown that the azimuthal angle dependences of this emission are caused by the lateral photocurrent component resulting from that anisotropy. A strong THz radiation was observed from the lower symmetry crystal planes illuminated along their surface normal, which has allowed to demonstrate experimentally user-friendly line-of-sight THz emitters made from the bulk InAs and InSb, InAs pn diodes and p-i-n structures with GaInAs active layers.
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页数：10
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