Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors

被引：13

作者：

Fahem, Zied ^{[1
]}

Bauhofer, Wolfgang ^{[1
]}

机构：

[1] Hamburg Univ Technol, Inst Opt & Elect Mat, D-21073 Hamburg, Germany

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 105卷

关键词：

Organic field-effect transistors; Gate dielectric; Insulator; Photo-curing; Thiol-ene; DIELECTRICS;

D O I：

10.1016/j.mee.2012.12.022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the synthesis and properties of fast photo-cured polymer dielectrics used as top gate insulators in organic field-effect transistors (OFETs). Two thiol functionalized compounds and a vinyl ether monomer were used to formulate thiol-ene polymers. The kinetic of the photo-curing of these formulations was determined by monitoring the curing process by FT-IR spectroscopy. Guided by measurements on metal-insulator-metal and metal-insulator-semiconductor structures, we determined the composition of the thiol-ene polymer and the optimal time of exposure to UV-irradiation to fabricate high performance poly(3-hexylthiophene)-based OFETs. We cured a mixture of a mercapto-functionalized polysiloxane produced with sol-gel process, 1,4-cyclohexanedimethanol divinyl ether and irgacure 127 in 15 s. The produced transistors have high on/off ratios of 10(5). The OFETs showed a field effect mobility of 10(-2) cm(2) V-1 s(-1) and low threshold voltage of -3 V. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：74 / 76

页数：3

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