Radiation-induced multi-bit upsets in SRAM-based FPGAs

被引：103
|
作者：
Quinn, H [1 ]
Graham, P
Krone, J
Caffrey, M
Rezgui, S
机构：
[1] Los Alamos Natl Lab, ISR 3 Space Data Syst, Los Alamos, NM 87545 USA
[2] Xilinx Corp, San Jose, CA 95124 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 06期
关键词：
heavy ions; field programmable gate arrays; proton radiation effects;
D O I：
10.1109/TNS.2005.860742
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper provides a methodology for estimating the proton and heavy ion static saturation cross-sections for multi-bit upsets (MBUs) in Xilinx field-programmable gate arrays and describes a methodology for determining MBUs' effects on triple-modular redundancy protected circuits. Experimental results are provided.
引用
收藏
页码：2455 / 2461
页数：7
相关论文
共 50 条
  • [1] A Self-Hosting Configuration Management System to Mitigate the Impact of Radiation-Induced Multi-Bit Upsets in SRAM-Based FPGAs
    Lanuzza, Marco
    Zicari, Paolo
    Frustaci, Fabio
    Perri, Stefania
    Corsonello, Pasquale
    [J]. IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (ISIE 2010), 2010, : 1989 - 1994
  • [2] Statistical Method to Extract Radiation-Induced Multiple-Cell Upsets in SRAM-Based FPGAs
    Perez-Celis, Andres
    Wirthlin, Michael J.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (01) : 50 - 56
  • [3] On the analysis of radiation-induced Single Event Transients on SRAM-based FPGAs
    Azimi, S.
    Sterpone, L.
    Du, B.
    Boragno, L.
    [J]. MICROELECTRONICS RELIABILITY, 2018, 88-90 : 936 - 940
  • [4] Protecting SRAM-based FPGAs Against Multiple Bit Upsets Using Erasure Codes
    Rao, Parthasarathy M. B.
    Ebrahimi, Mojtaba
    Seyyedi, Razi
    Tahoori, Mehdi B.
    [J]. 2014 51ST ACM/EDAC/IEEE DESIGN AUTOMATION CONFERENCE (DAC), 2014,
  • [5] Neutron single event upsets in SRAM-based FPGAs
    Ohlsson, M
    Dyreklev, P
    Johansson, K
    Alfke, P
    [J]. 1998 IEEE RADIATION EFFECTS DATA WORKSHOP, 1998, : 177 - 180
  • [6] Analysis of Radiation-induced Cross Domain Errors in TMR Architectures on SRAM-based FPGAs
    Sterpone, Luca
    Boragno, Luca
    [J]. 2017 IEEE 23RD INTERNATIONAL SYMPOSIUM ON ON-LINE TESTING AND ROBUST SYSTEM DESIGN (IOLTS), 2017, : 174 - 179
  • [7] Analyzing Radiation-Induced Transient Errors on SRAM-Based FPGAs by Propagation of Broadening Effect
    De Sio, Corrado
    Azimi, Sarah
    Sterpone, Luca
    Du, Boyang
    [J]. IEEE ACCESS, 2019, 7 : 140182 - 140189
  • [8] Mitigation and Experiment on Neutron Induced Single-Event Upsets in SRAM-Based FPGAs
    Zhu, Mingda
    Song, Ningfang
    Pan, Xiong
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (04) : 3063 - 3073
  • [9] Investigation of multi-bit upsets in a 150 nm technology SRAM device
    Radaelli, D
    Puchner, H
    Wong, S
    Daniel, S
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) : 2433 - 2437
  • [10] Radiation-induced Single Event Transient effects during the reconfiguration process of SRAM-based FPGAs
    De Sio, C.
    Azimi, S.
    Bozzoli, L.
    Du, B.
    Sterpone, L.
    [J]. MICROELECTRONICS RELIABILITY, 2019, 100
12345