Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

被引：20

作者：

Park, Ju Hyun ^{[1
]}

Kim, Hee-Dong ^{[1
]}

Hong, Seok Man ^{[1
]}

Yun, Min Ju ^{[1
]}

Jeon, Dong Su ^{[1
]}

Kim, Tae Geun ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2014年 / 8卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

resistive switching; ReRAM; silicon nitride; charge trapping; silicon; dangling bonds; NITRIDE;

D O I：

10.1002/pssr.201308309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O-2)-based ReRAM cells show a lower current (approximate to 0.3 A) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O-2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：239 / 242

页数：4

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