IGBT Junction Temperature Estimation in Water Cooling Power Modules

被引：0
|
作者：
Peng, Lisha [1 ,2 ]
Gao, Daqing [1 ]
Shen, Wanzeng [1 ]
Yan, Hongbin [1 ]
机构：
[1] Chinese Acad Sci, Dept Power Supply, Inst Modern Phys, Lanzhou, Gansu, Peoples R China
[2] Univ Chinese Acad Sci, Fac Phys, Beijing, Peoples R China
来源：
2018 IEEE INTERNATIONAL POWER ELECTRONICS AND APPLICATION CONFERENCE AND EXPOSITION (PEAC) | 2018年
关键词：
IGBT electro-thermal model; chip temperature; water cooling efficiency; thermal reliability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Power semiconductor device IGBT is related to the reliability of the power module, so it is necessary to obtain accurate IGBT junction temperature. In this paper, an electrothermal model of IGBT is established based on the theory of electrothermal analogy. The methods of interpolation, curve fitting and cyclic iteration are used to build the model, so junction temperature of IGBT module under different input conditions can be obtained. We also use the model to evaluate the efficiency of water cooling. The model can not only estimate the junction temperature accurately, but also assist the heat sink design, which helps to improve the reliability of the power module and has strong versatility.
引用
收藏
页码：1065 / 1070
页数：6
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