Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy

被引：0

作者：

Mizerov, A. M. ^{[1
]}

Jmerik, V. N. ^{[1
]}

Kaibyshev, V. K. ^{[1
]}

Komissarova, T. A. ^{[1
]}

Masalov, S. A. ^{[1
]}

Sitnikova, A. A. ^{[1
]}

Ivanov, S. V. ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

ACTA PHYSICA POLONICA A | 2008年 / 114卷 / 05期

关键词：

D O I：

10.12693/APhysPolA.114.1253

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al2O3 substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(000 (1) over bar) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 mu m thick GaN(000 (1) over bar) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature is T-s approximate to 760 degrees C and Ga to activated nitrogen flux ratio F-Ga/F-N* approximate to 1.8.

引用

页码：1253 / 1258

页数：6

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