STRUCTURAL AND ELECTRICAL PROPERTIES OF Cu2SnS3 AND Cu3SnS4 THIN FILMS PREPARED BY CBD TECHNIQUE

Thin CTS (Cu2SnS3 and Cu3SnS4) films prepared by chemical bath deposition (CBD) technique on glass substrates at 80 min deposition time. The influence of deposition parameters such as a substrate temperature (T-s=313, 323, 333 and 343 K) and pH value of chemical bath (1, 1.5 and 2) on the structural and electrical properties of the prepared Cu2SnS3 and Cu3SnS4 thin films were investigated using X-ray diffraction(XRD), Raman spectroscopy and Hall effect measurements, respectively. The results showed that the peak at 475 cm(-1) that correspond to Cu2-xS hexagonal phase was appeared in all prepared films with high intensity, whereas the weaker peaks at 268-273 cm(-1) were also founded by fitting the Raman spectra which correspond to cubic Cu2SnS3 phase. The optimum substrate temperature is 343 K for Cu2SnS3 thin films deposited at different pH values. The weaker peaks for Cu3SnS4 films found also at same wave number, those correspond to cubic Cu2SnS3 phase. These peaks were appeared in all T-s at pH equal 1.5 except for films deposited at 333 K substrate temperatures, where the peak was weak. The values of electrical resistivity, mobility, and carrier's concentration for thin Cu2SnS3 films according to Ts and pH value were varied within the range (1.316x10(-3) - 1.117x10(5) Omega. cm), (0.340-46.59 cm(2)/V.S) and (2.937x10(11) - 4.394x10(21) cm(-3)), respectively, while for thin Cu3SnS4 films according to Ts only were varied (8.349x10(-3) - 5.470x10(4) Omega. cm), (0.551 - 106.5 cm(2)/V.S) and (1.072x10(12) - 1.232x10(21) cm(-3)), respectively.