Growth and Characterization of Cu2SnS3 Thin Films by Spray Pyrolysis

被引：8

作者：

Chalapathi, U. ^{[1
]}

Uthanna, S. ^{[1
]}

Raja, V. Sundara ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Solar Energy Lab, Tirupati 517502, Andhra Pradesh, India

来源：

INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE & TECHNOLOGY | 2012年 / 1451卷

关键词：

Spray pyrolysis; Cu2SnS3 thin films; XRD; optical properties; electrical properties;

D O I：

10.1063/1.4732382

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Cu2SnS3, a potential absorber layer for thin film heterojunction solar cells was successfully deposited onto soda lime glass substrates by spray pyrolysis technique at a substrate temperature of 360 degrees C. The films were analyzed by studying their structural, compositional, morphological, optical and electrical properties. XRD studies revealed that the films are crystallized in tetragonal structure (1 (4) over bar 2m). The lattice parameters were found to be a=5.414 angstrom and c=10.763 angstrom. From EDS analysis the films were found to be non-stoichiometric with Cu-rich and S-deficient composition. The direct optical band gap of the films was found to be 1.42 eV. Room temperature electrical resistivity was found to be 3.4x10(-3) Omega-cm.

引用

页码：106 / 108

页数：3

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