Three Dimensional Dynamic Random Access Memory

被引:0
|
作者
Kirihata, Toshiaki [1 ]
机构
[1] IBM Syst & Technol Grp, Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We review high-density embedded 3D DRAM cache, industry 3D stacked DDR3 and wide IO mobile DRAM along with more recent Hybrid-Memory Cube (HMC) and High-Bandwidth Memory (HBM).
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页码:2 / 2
页数:1
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