SiNx/SiO2 gate insulator effects on reducing the leakage current of poly-Si TFTs employing advanced solid phase crystallization

被引：0
|
作者：
Kim, Chang-Yeon [1 ,2 ]
Lee, Hong-Koo [1 ]
Jung, Sang-Hoon [1 ]
Kim, Chang-Dong [1 ]
Kang, In Byeong [1 ]
Park, Sang-Geun [2 ]
Han, Min-Koo [2 ]
机构：
[1] LG PHILIPS LCD R&D Ctr, Anyang 431080, Gyongki Do, South Korea
[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
来源：
IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2007年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Poly-Si TFTs employing advanced solid phase crystallization were fabricated and investigated. We adopted the dual layered gate insulator composed of silicon nitride (SiNx) and silicon oxide (SiO2) to overcome high leakage current and low breakdown voltage. The leakage current decreased by up to one order of magnitude compared with that of TFT with SiO2 gate insulator and the breakdown field increased by 9 MV/cm.
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页码：1861 / 1863
页数：3
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