A 220GHz GaN HEMT Power Amplifier

被引：0

作者：

Sun, Yan ^{[1
,2
]}

Wu, Shaobing ^{[1
]}

Lu, Haiyan ^{[1
]}

Kong, Yuechan ^{[1
]}

Chen, Tangsheng ^{[1
]}

Li, Zhonghui ^{[1
]}

Zeng, Qingsheng ^{[2
]}

机构：

[1] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Peoples R China

[2] Nanjing Univ Aeronaut & Astronaut, Nanjing, Peoples R China

来源：

2019 PHOTONICS & ELECTROMAGNETICS RESEARCH SYMPOSIUM - FALL (PIERS - FALL) | 2019年

关键词：

W-BAND;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present the first millimeter-wave GaN HEMT monolithic integrated circuit (MMIC) amplifier with an operating frequency at 220 GHz. This MMIC has a small-signal gain well above 11 dB at 222 GHz. Moreover, the use of gallium nitride technology allows for achieving state-of-the-art saturated output power, up to 14dBm at 222 GHz. To our knowledge, the measured gain and output power levels are the best among any of the GaN MMICs beyond 200 GHz reported to date.

引用

页码：2978 / 2981

页数：4

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