A 220GHz LNA in SiGe BiCMOS process

被引：1
|
作者：
Zhong, Xiang [1 ]
Li, Qin [1 ]
Xu, Leijun [1 ]
机构：
[1] Jiangsu Univ, Southeast Univ, ICMMT2020, Sipailou Campus, Nanjing, Jiangsu, Peoples R China
来源：
2020 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2020 ONLINE) | 2020年
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1109/ICMMT49418.2020.9386920
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 220GHz LNA in SiGe BiCMOS technology. Four stage Cascode topology is chosen for this circuit. The amplifier takes advantage of microstrip transmission line to realize the inductive passive device. The circuit was implemented in 0.13 mu m SiGe BiCMOS process with f(T)/f(max) of 240/280GHz. The simulation results show that the LNA has a gain of 10.9dB at 220GHz and a 3-dB bandwidth of about 17GHz. The LNA draws about 14.66mA from a 2.4V supply.
引用
收藏
页数：3
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