A 0.65V Embedded SDRAM with Smart Boosting and Power Management in a 45nm CMOS Technology

被引：0

作者：

Pyo, Suk-Soo ^{[1
]}

Kim, Jun-Sung ^{[1
]}

Kim, Jung-Han ^{[1
]}

Jung, Hyun-Taek ^{[1
]}

Song, Tae-Joong ^{[1
]}

Lee, Cheol-Ha ^{[1
]}

Kim, Gyu-Hong ^{[1
]}

Lee, Young-Keun ^{[1
]}

Kim, Kee-Sup ^{[1
]}

机构：

[1] Samsung Elect, Design Technol, Syst LSI, Yongin, South Korea

来源：

2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an embedded SDRAM (eSDRAM) with smart boosting and power management (SB-PM) scheme for low power operation has been designed. SB-PM scheme decreases 40.3% of dynamic power and 69.1% of standby power consumption with ECC compared with the conventional scheme. A 266-Mb eSDRAM with SB-PM scheme is designed in a 45-nm CMOS technology showing 51.2-mW dynamic power and 2.05mW standby power consumption at VDD=0.65V and 85 degrees C.

引用

页数：4

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