Thermoelectric Transport in PbSe Quantum Wells

被引:1
|
作者
Rogacheva, Elena I. [1 ]
Nashchekina, Olga N. [1 ]
Ol'khovskaya, Svetlana I. [1 ]
Dresselhaus, Millie S. [2 ]
机构
[1] Natl Tech Univ, Kharkov Polytech Inst, Dept Theoret & Expt Phys, 21 Frunze, UA-61002 Kharkov, Ukraine
[2] MIT, Dept Phys, 77 Massachusetts Ave, Cambridge, MA 02139 USA
关键词
PbSe quantum wells; thermoelectric properties; temperature; size effects;
D O I
10.1063/1.4731519
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The objects of the study are KCl/PbSe/EuSe quantum wells with PbSe layer thickness in the range d=5-420 nm. The thickness and temperature (77-300 K) dependences of the thermoelectric properties were obtained. It was established that as d increases to similar to 20nm, the inversion of the electrical conductivity sign from p to n occurs. In the d-dependences of the properties one can isolate a monotonic and oscillatory components, whose presence is attributed to the manifestation of the classical and quantum size effects, respectively. The oscillatory behavior of properties with the oscillation period Delta d=18 +/- 2 nm is observed in the thickness range up to 80 nm and accompanied by a periodic change in the conductivity sign; at d>80 nm the Seebeck coefficient, electrical conductivity, charge carrier mobility, exponent in the temperature dependence of carrier mobility, and power factor change monotonically up to similar to 100-150 nm and after that remain practically constant.
引用
收藏
页码:151 / 154
页数:4
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