Transport anisotropy in Ge quantum wells in the absence of quantum oscillations

被引:4
|
作者
Shi, Q. [1 ]
Zudov, M. A. [1 ]
Morrison, C. [2 ]
Myronov, M. [2 ]
机构
[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA
[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源
PHYSICAL REVIEW B | 2015年 / 92卷 / 16期
基金
英国工程与自然科学研究理事会;
关键词
2-DIMENSIONAL ELECTRON-GAS; RANDOM MAGNETIC-FIELD; HIGH LANDAU-LEVELS; GAAS-ALXGA1-XAS HETEROSTRUCTURES; MAGNETORESISTANCE; STATE; SYSTEMS; LIQUID; CRYSTALLIZATION; RESISTANCE;
D O I
10.1103/PhysRevB.92.161405
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A recent study of a high-mobility two-dimensional hole gas in a strained Ge quantum well revealed strong transport anisotropy in the quantum Hall regime when the magnetic field was tilted away from the sample normal [Q. Shi, M. A. Zudov, C. Morrison, and M. Myronov, Phys. Rev. B 91, 201301( R) (2015)]. In the present study we demonstrate that the anisotropy persists to such high temperatures and filling factors that quantum oscillations are no longer observed. This finding rules out the formation of a stripe phase as a possible origin for the observed anisotropy. However, we also show that the observed anisotropy is not consistent with other known anisotropies, such as those arising from finite-thickness effects or surface roughness.
引用
收藏
页数:5
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