Ternary exciplexes with an external quantum efficiency of 17.5% are developed by mixing a p-type donor material, an n-type acceptor material, and a donor-acceptor type material together. In the ternary mixture, the n-type donor generates exciplexes with the p-type donor and the donor-acceptor type material at the same time. Two different exciplexes with dissimilar emission wavelengths are formed and the emission of the high-energy exciplex is transferred to the low-energy exciplex by energy transfer. The high-energy exciplex and low-energy exciplex work as a host and dopant in the emitting layer, respectively. The internal exciplex-to-exciplex energy transfer induces efficient emission of the low-energy exciplex, resulting in high efficiency of 17.5% in the exciplex device. This is the first demonstration of self-energy transfer in the exciplex and the efficiency of the ternary exciplexes is one of the best quantum efficiencies achieved in the exciplex organic light-emitting diodes.
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Seoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South Korea
Ko, Seongmin
Yang, Kwangmo
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Seoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South Korea
Yang, Kwangmo
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Nam, Sungho
Kim, Joonghyuk
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Samsung Elect Co Ltd, Samsung Adv Inst Technol, Suwon 16678, Gyeonggi Do, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South Korea
Kim, Joonghyuk
Kim, Ji-Whan
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Samsung Elect Co Ltd, Samsung Adv Inst Technol, Suwon 16678, Gyeonggi Do, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South Korea
Kim, Ji-Whan
Lee, Jaesang
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Seoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South Korea