Influence of manganese rate on structural, optical and electrochemical properties of CeO2 thin films deposited by spray pyrolysis: Supercapacitor applications

被引:17
|
作者
Zimou, J. [1 ]
Nouneh, K. [1 ]
Talbi, A. [1 ]
El Gana, L. [1 ]
El-Habib, A. [2 ]
Hsissou, R. [3 ]
Addou, M. [2 ]
机构
[1] Ibn Tofail Univ, Fac Sci, Dept Phys, Lab Mat Phys & Subatom, BP 133, Kenitra 14000, Morocco
[2] Abdelmalek Essadi Univ, Fac Sci & Tech, Thin Film & Nanomat Res Team, Tanger, Morocco
[3] Ibn Tofail Univ, Fac Sci, Lab Organ Chem Catalysis & Environm, BP 242, Kenitra 14000, Morocco
关键词
Ce(1_x)MnxO(2) thin films; Electrochemical properties; ITO substrates; XRD/UV-Vis/AFM; Band gap energy; Storage capacity; ROOM-TEMPERATURE FERROMAGNETISM; MECHANICAL-PROPERTIES; MN; OXIDE; NANOPARTICLES; PERFORMANCE; NANOCOMPOSITE; EVOLUTION; NI;
D O I
10.1016/j.jre.2021.09.018
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
The present work aimed to investigate the electrochemical properties of ITO substrates in propylene carbonate (PC) with 0.5 mol/L lithium perchlorate (LiClO4) medium in the presence of elaborated thin films of cerium dioxide pure and doped with manganese at varying percentages. Ce1_xMnxO2 (x = 0 wt%, 2 wt%, 4 wt% and 6 wt%) were successfully deposited by the spray pyrolysis (SP) technique on the glass substrate and ITO at 450 degrees C. The effects of manganese (Mn) doped thin films Ce1_xMnxO2 were studied and investigated by using different analyses namely X-ray diffraction (XRD) analysis, Raman spectroscopy method, UV-Vis spectrophotometer technique, atomic force microscopy (AFM) analysis and electrochemical properties. XRD data obtained present a polycrystalline with a facecentred cubic structure of fluorite type. Raman results of undoped and Mn doped thin films show two peaks at 465 and 600 cm-1, due to the formation of extrinsic oxygen vacancies by the incorporation of Mn into Ce1_xMnxO2 matrix. Energy dispersive spectroscopy (EDS) data show the presence of Ce, O, and Mn elements in the elaborated films. The AFM results reveal that the surface roughness decreases with increasing Mn rate. Further, band gap energy of thin films decreases with increasing in Mn rate due to the formation of defect state between valence and conduction band. The storage capacity of the elaborated Ce1_xMnxO2/ITO/PC + LiClO4 electrode reaches a maximum of 1.997 mF in the presence of 6 wt% of Mn. (C) 2021 Chinese Society of Rare Earths. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:1611 / 1618
页数:8
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