Electron-phonon coupling in two-dimensional silicene and germanene

被引:101
|
作者
Yan, Jia-An [1 ]
Stein, Ryan [1 ]
Schaefer, David M. [1 ]
Wang, Xiao-Qian [2 ,3 ]
Chou, M. Y. [4 ,5 ]
机构
[1] Towson Univ, Dept Phys Astron & Geosci, Towson, MD 21252 USA
[2] Clark Atlanta Univ, Dept Phys, Atlanta, GA 30314 USA
[3] Clark Atlanta Univ, Ctr Funct Nanoscale Mat, Atlanta, GA 30314 USA
[4] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[5] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan
来源
PHYSICAL REVIEW B | 2013年 / 88卷 / 12期
基金
美国国家科学基金会;
关键词
FUNCTIONAL PERTURBATION-THEORY; GRAPHITE; GRAPHENE; CRYSTAL;
D O I
10.1103/PhysRevB.88.121403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Following the work in graphene, we report a first-principles study of electron-phonon coupling (EPC) in low-buckled monolayer silicene and germanene. Despite the similar honeycomb atomic arrangement and linear-band dispersion, the EPC matrix-element squares of the Gamma-Eg and K-A(1) modes in silicene are only about 50% of those in graphene. However, the smaller Fermi velocity in silicene compensates for this reduction by providing a larger joint electronic density of states near the Dirac point, giving rise to comparable phonon linewidths. We predict that Kohn anomalies associated with these two optical modes are significant in silicene. In addition, the EPC-induced frequency shift and linewidth of the Raman-active Gamma-Eg mode in silicene are calculated as a function of doping. The results are comparable to those in graphene, indicating a similar nonadiabaticdynamical origin. In contrast, the EPC in germanene is found to be much reduced.
引用
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页数:5
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