We report the effects of electron-phonon coupling on the charge density distribution of polarons in armchair nanoribbons of silicene by using an extended tight-binding model with lattice relaxation. The results show that the charge distribution in silicene nanoribbons is analogous to graphene and that the charge localization increases when the intensity of electron-phonon coupling also increases. We further show that silicene nanoribbons may be a conducting or semiconducting material, depending on both the width of the nanoribbon and the possibility of polaron formation. This contribution provides additional insight into the behavior of polarons in silicene nanoribbons, systems of great interest. (C) 2019 Elsevier B.V. All rights reserved.
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Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
KIT, Inst Festkorperphys, D-76021 Karlsruhe, Germany
Hong Kong Univ Sci & Technol, Inst Adv Study, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Zhang, Ting
Heid, Rolf
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KIT, Inst Festkorperphys, D-76021 Karlsruhe, GermanyHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Heid, Rolf
Bohnen, Klaus-Peter
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KIT, Inst Festkorperphys, D-76021 Karlsruhe, GermanyHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Bohnen, Klaus-Peter
Sheng, Ping
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Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Hong Kong Univ Sci & Technol, Inst Adv Study, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Sheng, Ping
Chan, C. T.
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Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Hong Kong Univ Sci & Technol, Inst Adv Study, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
机构:
Clark Atlanta Univ, Dept Phys, Atlanta, GA 30314 USA
Clark Atlanta Univ, Ctr Funct Nanoscale Mat, Atlanta, GA 30314 USATowson Univ, Dept Phys Astron & Geosci, Towson, MD 21252 USA
Wang, Xiao-Qian
Chou, M. Y.
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Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, TaiwanTowson Univ, Dept Phys Astron & Geosci, Towson, MD 21252 USA
机构:
Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, SpainInst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, Spain
Mirjolet, Mathieu
Rivadulla, Francisco
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Univ Santiago Compostela, Ctr Invest Quim Biolox & Mat Moleculares, CIQUS, Santiago De Compostela 15782, Spain
Univ Santiago Compostela, Dept Quim Fis, Santiago De Compostela 15782, SpainInst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, Spain
Rivadulla, Francisco
Marsik, Premysl
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Univ Fribourg, Fac Sci & Med, Dept Phys, CH-1700 Fribourg, SwitzerlandInst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, Spain
Marsik, Premysl
Borisov, Vladislav
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Uppsala Univ, Dept Phys & Astron, Box 516, SE-75120 Uppsala, SwedenInst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, Spain