Power-driven challenges in nanometer design

被引：22

作者：

Sylvester, D ^{[1
]}

Kaul, H ^{[1
]}

机构：

[1] Univ Michigan, Ann Arbor, MI 48109 USA

来源：

IEEE DESIGN & TEST OF COMPUTERS | 2001年 / 18卷 / 06期

关键词：

Computer simulation - Electric currents - Electric potential - Electric power supplies to apparatus - Electronics packaging - MOS devices - Nanotechnology - Reliability - Thermal variables control;

D O I：

10.1109/54.970420

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Addressing fundamental challenges to designing: high-performance ICs in nanometer-scale technologies, the authors advocate a flexible approach to limiting both dynamic and,static power. They recommend global-signaling strategies to curb communication power requirements and thermal management techniques to ease the burden on packaging.

引用

页码：12 / 21

页数：10

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