Quantum dot devices for optoelectronics applications

被引：0

作者：

Su, YK ^{[1
]}

Ji, LW ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

来源：

2005 EMERGING INFORMATION TECHNOLOGY CONFERENCE (EITC) | 2005年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This work focused on the optoclectronics applications of nitride-based quantum dot devices. It includes the growth and characterization of InGaN/GaN self-assembled quantum dots (SAQDs) and related optoelectronic devices (MQD LEDs and MSM PDs with QDs) by metalorganic vapor phase epitaxy (MONIPE). The optical and structural properties of InGaN/GaN nanostructures have been characterized by photoluminescence (PL), Raman, scanning near-field optical microscopy (SNOM), atomic force microscopy (AFM), and high-resolution transmission electron microscopy (HRTEM), respectively. Index Terms- GaN, quantum dots, photodiodes, light-emitting diodes, metal-organic chemical vapor deposition, Raman, SNOM.

引用

页码：27 / 28

页数：2

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