QUANTUM DOT HETEROSTRUCTURES FOR SEMICONDUCTOR DEVICES

被引：0

作者：

Ledentsov, Nikolay N. ^{[1
,2
,3
]}

机构：

[1] VI Syst GmbH, Berlin, Germany

[2] RAS, Ioffe Inst, St Petersburg, Russia

[3] Acad Univ, St Petersburg, Russia

来源：

11TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2019) | 2020年

关键词：

Quantum dot; semiconductor heterostructure; laser diode; LED; silicon photonics; cryptography; entanglement; nanoelectronics;

D O I：

10.37904/nanocon.2019.8446

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

"Quantum dot (QD)" or, other name, "quantum box", represents an ultimate case of size quantization in solids, where the motion of the charge carriers is restricted in all three dimensions (3D). The critical condition for the formation of truly atom-like density states is a high quality of interfaces surrounding such nano-objects. Defects at interfaces and the related scattering and nonradiative recombination effects drastically reduce or even eliminate advantages of the 3D nanoobjects. Consequently, heteroepitaxial overgrowth became necessary before all the advantages of zero-dimensional electron spectrum in QDs were implemented both in core-shell colloidal QDs and in epitaxially-grown QD heterostructures.

引用

页码：14 / 21

页数：8

共 50 条

[1] Semiconductor quantum dot heterostructures (growth and applications)
Ustinov, VM
[J]. NANOSTRUCTURED FILMS AND COATINGS, 2000, 78 : 41 - 54
[2] Quantum-dot semiconductor waveguide devices
Lu, Z. G.
Liu, J. R.
Raymond, S.
Poole, P. J.
Barrios, P. J.
Haffouz, S.
Poitras, D.
Pakulski, G.
Taebi, S.
Song, Y.
Zhang, X. P.
Hall, T.
[J]. OPTOELECTRONIC MATERIALS AND DEVICES II, 2007, 6782
[3] Nanoengineering the second order susceptibility in semiconductor quantum dot heterostructures
Zielinski, Marcin
Winter, Shoshana
Kolkowski, Radoslaw
Nogues, Claude
Oron, Dan
Zyss, Joseph
Chauvat, Dominique
[J]. OPTICS EXPRESS, 2011, 19 (07): : 6657 - 6670
[4] Patterned semiconductor inverted quantum dot photonic devices
Coleman, J. J.
[J]. SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XVIII, 2016, 9751
[5] Control of valence band states in pyramidal quantum dot-in-dot semiconductor heterostructures
Troncale, V.
Karlsson, K. F.
Pelucchi, E.
Rudra, A.
Kapon, E.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (24)
[6] Quantum Dot Heterostructures
J.M. Rorison
[J]. Optical and Quantum Electronics, 2000, 32 (1) : 115 - 115
[7] Quantum control study of ultrafast optical responses in semiconductor quantum dot devices
Huang, Jung Y.
Lin, Chien Y.
Liu, Wei-Sheng
Chyi, Jen-Inn
[J]. OPTICS EXPRESS, 2014, 22 (25): : 30815 - 30825
[8] SEMICONDUCTOR QUANTUM HETEROSTRUCTURES
CHANG, LL
ESAKI, L
[J]. PHYSICS TODAY, 1992, 45 (10) : 36 - 43
[9] Electron-phonon interaction in quantum-dot/quantum-well semiconductor heterostructures
Comas, F
Studart, N
[J]. PHYSICAL REVIEW B, 2004, 69 (23) : 235321 - 1
[10] Geometry-induced localization phenomena in semiconductor quantum-dot heterostructures
Lassen, B
Willatzen, M
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 28 (04): : 568 - 575

← 1 2 3 4 5 →