Ka-band LNA MMIC's realized in fmax > 580 GHz GaN HEMT Technology

被引：0

作者：

Micovic, Miro ^{[1
]}

Brown, David ^{[1
]}

Regan, Dean ^{[1
]}

Wong, Joel ^{[1
]}

Tai, Joe ^{[1
]}

Kurdoghlian, Ara ^{[1
]}

Herrault, Florian ^{[1
]}

Tang, Yan ^{[1
]}

Burnham, Shawn D. ^{[1
]}

Fung, Helen ^{[1
]}

Schmitz, Adele ^{[1
]}

Khalaf, Isaac ^{[1
]}

Santos, Dayward ^{[1
]}

Prophet, Eric ^{[1
]}

Bracamontes, Hector ^{[1
]}

McGuire, Chuck ^{[1
]}

Grabar, Robert ^{[1
]}

机构：

[1] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA

来源：

2016 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2016年

关键词：

GaN; MMIC; LNA; millimeter-wave; Ka-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) [1] GaN Transistors advanced under the DARPA Nitride Electronic NeXt-Generation Technology (NEXT) Program. The reported broadband Ka-band (27 GHz - 40 GHz) GaN LNA MMIC's have Noise Figure (NF) as low as 1 dB measured at a frequency of 37 GHz, NF < 2 dB with > 24dB of gain across 28 GHz-39.2 GHz frequency range, and a very broad range of usable DC bias conditions (Vd: 0.6V-4V, Pdc: 5 mW-310 mW). This is to the best of our knowledge the lowest NF reported for GaN LNA in this frequency band.

引用

页码：62 / 65

页数：4

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