Bandgap tuning in armchair MoS2 nanoribbon

被引：92

作者：

Yue, Qu ^{[1
]}

Chang, Shengli ^{[1
]}

Kang, Jun ^{[2
]}

Zhang, Xueao ^{[1
]}

Shao, Zhengzheng ^{[1
]}

Qin, Shiqiao ^{[1
]}

Li, Jingbo ^{[2
]}

机构：

[1] Natl Univ Def Technol, Sch Sci, Changsha 410073, Hunan, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2012年 / 24卷 / 33期

基金：

中国国家自然科学基金;

关键词：

ELECTRIC-FIELD;

D O I：

10.1088/0953-8984/24/33/335501

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the first-principles calculations of bandgap modulation in armchair MoS2 nanoribbon (AMoS(2)NR) by transverse and perpendicular electric fields respectively. In the monolayer AMoS(2)NR case, it is shown that the bandgap can be significantly reduced and be closed by transverse field, whereas the bandgap modulation is absent under perpendicular field. The critical strength of transverse field for gap closure decreases as ribbon width increases. In the multilayer AMoS(2)NR case, in contrast, it is shown that the bandgap can be effectively reduced by both transverse and perpendicular fields. Nevertheless, it seems that the two fields exhibit different modulation effects on the gap. The critical strength of perpendicular field for gap closure decreases with increasing number of layers, while the critical strength of transverse field is almost independent of it.

引用

页数：7

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