Properties of Quadratic Flux-Controlled and Charge-Controlled Memristor

被引：0
|
作者：
Guo, Qiang [1 ]
Gu, Weicheng [1 ]
Tao, Zhikuo [1 ]
机构：
[1] Nanjing Univ Posts & Telecommun, Coll Elect Sci & Engn, Nanjing 210003, Jiangsu, Peoples R China
来源：
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCES IN MECHANICAL ENGINEERING AND INDUSTRIAL INFORMATICS | 2015年 / 15卷
关键词：
Memristor; hysteresis; quadratic; CIRCUIT;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
As the fourth basic passive component, memristor has attracted more attention in recent years. The memristor can be divided into charge-controlled and flux-controlled types. In this paper, properties of quadratic flux-controlled and charge-controlled memristor are investigated. The v-i characteristics of memristor with different parameters and different frequencies were studied under sinusoidal bias of voltage. The results show that, pinched hysteresis loops were observed for all memristors with different parameters, and different input frequencies.
引用
收藏
页码：1461 / 1465
页数：5
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