Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

被引：2
|
作者：
Thomas, Tegan [1 ]
Blackman, Christopher S. [1 ]
Parkin, Ivan P. [1 ]
Carmalt, Claire J. [1 ]
机构：
[1] UCL, Dept Chem, Mat Chem Ctr, London WC1H 0AJ, England
来源：
THIN SOLID FILMS | 2013年 / 537卷
基金：
英国工程与自然科学研究理事会;
关键词：
Arsenide; Chemical vapour deposition; Thin film; TITANIUM NITRIDE; PHOSPHIDE FILMS; GLASS; CVD; COMPLEXES; COATINGS; ROUTES; TICL4; APCVD;
D O I：
10.1016/j.tsf.2013.04.144
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl4 or VOCl3 with (BuAsH2)-Bu-t. Using the vanadium precursor VCl4, films were deposited at substrate temperatures of 550-600 degrees C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl3 as the vanadium source resulted in films being deposited between 450 and 600 degrees C and, unlike when using VCl4, were silver in appearance. The films deposited using VOCl3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. (C) 2013 Published by Elsevier B.V.
引用
收藏
页码：171 / 175
页数：5
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