CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SIGE THIN-FILMS FROM SIH4-GEH4-HCL-H2 GAS-MIXTURES IN AN ATMOSPHERIC-PRESSURE PROCESS

被引：12
|
作者：
KUHNE, H
MORGENSTERN, T
ZAUMSEIL, P
KRUGER, D
BUGIEL, E
RITTER, G
机构：
[1] Institute of Semiconductor Physics, Frankfurt/Oder
来源：
THIN SOLID FILMS | 1992年 / 222卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(92)90033-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Chemical vapour deposition of epitaxial SiGe-layers from SiH4, GeH4, H-2 and HCl gas mixtures has been studied experimentally at atmospheric pressure. The results obtained and those of other authors have been compared with a simple mass-transport-reaction limited deposition model which seems to be valid over a wide range of total pressures and temperatures.
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页码：34 / 37
页数：4
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