Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

被引：2

作者：

Thomas, Tegan ^{[1
]}

Blackman, Christopher S. ^{[1
]}

Parkin, Ivan P. ^{[1
]}

Carmalt, Claire J. ^{[1
]}

机构：

[1] UCL, Dept Chem, Mat Chem Ctr, London WC1H 0AJ, England

来源：

THIN SOLID FILMS | 2013年 / 537卷

基金：

英国工程与自然科学研究理事会;

关键词：

Arsenide; Chemical vapour deposition; Thin film; TITANIUM NITRIDE; PHOSPHIDE FILMS; GLASS; CVD; COMPLEXES; COATINGS; ROUTES; TICL4; APCVD;

D O I：

10.1016/j.tsf.2013.04.144

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl4 or VOCl3 with (BuAsH2)-Bu-t. Using the vanadium precursor VCl4, films were deposited at substrate temperatures of 550-600 degrees C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl3 as the vanadium source resulted in films being deposited between 450 and 600 degrees C and, unlike when using VCl4, were silver in appearance. The films deposited using VOCl3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. (C) 2013 Published by Elsevier B.V.

引用

页码：171 / 175

页数：5

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