Atmospheric pressure chemical vapour deposition of vanadium diselenide thin films

被引:65
|
作者
Boscher, Nicolas D. [1 ]
Blackman, Christopher S. [1 ]
Carmalt, Claire J. [1 ]
Parkin, Ivan P. [1 ]
Prieto, A. Garcia [1 ]
机构
[1] UCL, Dept Chem, Mat Chem Res Ctr, London WC1H 0AJ, England
基金
英国工程与自然科学研究理事会;
关键词
chemical vapour deposition; vanadium diselenide; thin films;
D O I
10.1016/j.apsusc.2007.01.002
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atmospheric pressure chemical vapour deposition (APCVD) of vanadium diselenide thin films on glass substrates was achieved by reaction of [V(NMe(2))(4)] and 'Bu(2)Se. X-ray diffraction showed that the VSe(2) films were,cr'ystalline with preferential growth either along the (1 0 1) or the (1 1 0) direction. Energy-dispersive analysis by X-rays (EDAX) gave a V:Se ratio close to 1:2 for all films. The films were matt black in appearance, were adhesive, passed the Scotch tape test but could be scratched with a steel scalpel. SEM showed that the films were composed of plate-like crystallites orientated parallel to the substrate which become longer and thicker with increasing deposition temperature. Attempts to produce vanadium selenide films were also performed using 'Bu(2)Se and two different vanadium precursors: VCl(4) and VOCl(3). Both were found to be unsuitable for producing VSe, from the APCVD reaction with 'Bu(2)Se. The VSe(2) showed charge density wave transition at 110-115 K. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:6041 / 6046
页数:6
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