Investigation of resistive switching effect in nanocrystalline TiO2 thin film for neuromorphic system manufacturing

被引：0
|
作者：
Dukhan, D. D. [1 ]
Tominov, R. V. [1 ]
Avilov, V. I. [1 ]
Zamburg, E. G. [2 ]
Smirnov, V. A. [1 ]
Ageev, O. A. [1 ]
机构：
[1] Southern Fed Univ, Inst Nanotechnol Elect & Equipment Engn, Taganrog 347928, Russia
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117582, Singapore
来源：
INTERNATIONAL CONFERENCE PHYSICA.SPB/2019 | 2019年 / 1400卷
关键词：
LOCAL ANODIC-OXIDATION; NANOSTRUCTURES; OXIDE;
D O I：
10.1088/1742-6596/1400/5/055032
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Effect of resistive switching in TiO2 thin film was investigated. It was shown, resistive switching from high resistance state (HRS) to low resistance state (LRS) has occurred at 3.2 +/- 0.2 V, and from LRS to HRS at -2.8 +/- 0.5 V. Endurance test shown that HRS decreased from 42.31 +/- 5.26 kO to 26.45 +/- 6.14 kO, LRS increased from 2.25 +/- 1.15 kO to 3.45 +/- 1.18 kO. HRS/LRS coefficient has decreased from 18.8 to 7.6. Time-stability of TiO2 surface charge was investigated. It was shown, that voltage decreased from 320 +/- 21 to 22 +/- 5 mV during 90 minutes and square side increased from 3.43 +/- 0.12 to 4.12 +/- 0.14 mu m during 90 minutes. The results can be useful for neuromorphic systems manufacturing based on nanocrystalline TiO2 films.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] Synthesis of titanium dioxide TiO2 thin film to achieve resistive switching property for the application of nonvolatile memory
    Farooq, Tamkeen
    Surana, Karan
    Mukherjee, Sabyasachi
    MATERIALS TODAY-PROCEEDINGS, 2021, 34 : 616 - 620
  • [32] Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film
    Liu, Hui-Chuan
    Tang, Xin-Gui
    Liu, Qiu-Xiang
    Jiang, Yan-Ping
    Li, Wen-Hua
    Guo, Xiao-Bin
    Tang, Zhen-Hua
    CERAMICS INTERNATIONAL, 2020, 46 (13) : 21196 - 21201
  • [33] Resistive switching in a Pt/TiO2/Pt thin film stack -: a candidate for a non-volatile ReRAM
    Schroeder, Herbert
    Jeong, Doo Seok
    MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 1982 - 1985
  • [34] Investigation on preparation and structure of TiO2 thin film
    Meng, Xianquan
    Wang, Jun
    He, Lei
    Fan, Xiangjun
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1999, 20 (05): : 395 - 399
  • [35] Photocatalytic properties of nanocrystalline TiO2 thin film with Ag additions
    Chang, CC
    Lin, CK
    Chan, CC
    Hsu, CS
    Chen, CY
    THIN SOLID FILMS, 2006, 494 (1-2) : 274 - 278
  • [36] Reaction of RuII Diazafluorenone Compound with Nanocrystalline TiO2 Thin Film
    Heuer, William B.
    Xia, Hai-Long
    Abrahamsson, Maria
    Zhou, Zhen
    Ardo, Shane
    Sarjeant, Amy A. Narducci
    Meyer, Gerald J.
    INORGANIC CHEMISTRY, 2010, 49 (17) : 7726 - 7734
  • [37] Effects of the compliance current on the resistive switching behavior of TiO2 thin films
    Cao, X.
    Li, X. M.
    Gao, X. D.
    Zhang, Y. W.
    Liu, X. J.
    Wang, Q.
    Chen, L. D.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 97 (04): : 883 - 887
  • [38] Improved Resistive Switching Properties of Solution Processed TiO2 Thin Films
    Biju, Kuyyadi P.
    Liu, Xinjun
    Bourim, El Mostafa
    Kim, Insung
    Jung, Seungjae
    Park, Jubong
    Hwang, Hyunsang
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (12) : H443 - H446
  • [39] Orientational growth and resistive switching behavior of anatase TiO2 thin films
    Wu, Weibing
    Zhang, Nannan
    Shan, BeiBei
    Feng, Kai
    MATERIALS CHEMISTRY AND PHYSICS, 2015, 156 : 76 - 81
  • [40] Effects of the compliance current on the resistive switching behavior of TiO2 thin films
    X. Cao
    X. M. Li
    X. D. Gao
    Y. W. Zhang
    X. J. Liu
    Q. Wang
    L. D. Chen
    Applied Physics A, 2009, 97 : 883 - 887
12345