Investigation of resistive switching effect in nanocrystalline TiO2 thin film for neuromorphic system manufacturing

被引：0
|
作者：
Dukhan, D. D. [1 ]
Tominov, R. V. [1 ]
Avilov, V. I. [1 ]
Zamburg, E. G. [2 ]
Smirnov, V. A. [1 ]
Ageev, O. A. [1 ]
机构：
[1] Southern Fed Univ, Inst Nanotechnol Elect & Equipment Engn, Taganrog 347928, Russia
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117582, Singapore
来源：
INTERNATIONAL CONFERENCE PHYSICA.SPB/2019 | 2019年 / 1400卷
关键词：
LOCAL ANODIC-OXIDATION; NANOSTRUCTURES; OXIDE;
D O I：
10.1088/1742-6596/1400/5/055032
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Effect of resistive switching in TiO2 thin film was investigated. It was shown, resistive switching from high resistance state (HRS) to low resistance state (LRS) has occurred at 3.2 +/- 0.2 V, and from LRS to HRS at -2.8 +/- 0.5 V. Endurance test shown that HRS decreased from 42.31 +/- 5.26 kO to 26.45 +/- 6.14 kO, LRS increased from 2.25 +/- 1.15 kO to 3.45 +/- 1.18 kO. HRS/LRS coefficient has decreased from 18.8 to 7.6. Time-stability of TiO2 surface charge was investigated. It was shown, that voltage decreased from 320 +/- 21 to 22 +/- 5 mV during 90 minutes and square side increased from 3.43 +/- 0.12 to 4.12 +/- 0.14 mu m during 90 minutes. The results can be useful for neuromorphic systems manufacturing based on nanocrystalline TiO2 films.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] Preparation and optical characteristics of nanocrystalline TiO2 thin film
    Yin, Li-song
    Zhou, Qi-fa
    Wei, Ren-yong
    Zhang, Jin-xiu
    Zhongshan Daxue Xuebao/Acta Scientiarum Natralium Universitatis Sunyatseni, 2000, 39 (04): : 52 - 56
  • [22] Resistive switching characteristics of TiO2 thin films with different electrodes
    Jae Hyuk Shim
    Quanli Hu
    Mi Ra Park
    Yawar Abbas
    Chi Jung Kang
    Jaewan Kim
    Tae-Sik Yoon
    Journal of the Korean Physical Society, 2015, 67 : 936 - 940
  • [23] Resistive switching characteristics of TiO2 thin films with different electrodes
    Shim, Jae Hyuk
    Hu, Quanli
    Park, Mi Ra
    Abbas, Yawar
    Kang, Chi Jung
    Kim, Jaewan
    Yoon, Tae-Sik
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 67 (05) : 936 - 940
  • [24] Correlation of Electrochemical Effects and Resistive Switching in TiO2 Thin Films
    Lu, Wanheng
    Wong, Lai-Mun
    Wang, Shijie
    Zeng, Kaiyang
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2016, 163 (05) : E147 - E153
  • [25] Impedance spectroscopy of TiO2 thin films showing resistive switching
    Jeong, Doo Seok
    Schroeder, Herbert
    Waser, Rainer
    APPLIED PHYSICS LETTERS, 2006, 89 (08)
  • [26] Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films
    Lai, Chun-Hung
    Liu, Chih-Yi
    Hsu, Cheng-Hsing
    Lee, Yi-Mu
    Lin, Jenn-Sen
    Yang, Hsiwen
    THIN SOLID FILMS, 2013, 529 : 430 - 434
  • [27] Investigation on resistive switching characteristics of ZnO thin film
    Wei, Min
    Yang, Fan
    Li, Chunfu
    Deng, Hong
    Wen, Guangjun
    NANOEPITAXY: MATERIALS AND DEVICES VI, 2014, 9174
  • [28] Resistive Switching Characteristics of Flexible TiO2 Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method
    Chen, Yuanqing
    Li, Lingwei
    Yin, Xiaoru
    Yerramilli, Aditya
    Shen, Yuxia
    Song, Yang
    Bian, Weibai
    Li, Na
    Zhao, Zhao
    Qu, Wenwen
    Theodore, N. David
    Alford, T. L.
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (11) : 1528 - 1531
  • [29] Variation of switching mechanism in TiO2 thin film resistive random access memory with Ag and graphene electrodes
    Hu, Yushi
    Perello, David
    Yun, Minhee
    Kwon, Deok-Hwang
    Kim, Miyoung
    MICROELECTRONIC ENGINEERING, 2013, 104 : 42 - 47
  • [30] TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching
    Fujimoto, Masayuki
    Koyama, Hiroshi
    Konagai, Masashi
    Hosoi, Yasunari
    Ishihara, Kazuya
    Ohnishi, Shigeo
    Awaya, Nobuyoshi
    APPLIED PHYSICS LETTERS, 2006, 89 (22)
12345