Investigation of resistive switching effect in nanocrystalline TiO2 thin film for neuromorphic system manufacturing

被引：0
|
作者：
Dukhan, D. D. [1 ]
Tominov, R. V. [1 ]
Avilov, V. I. [1 ]
Zamburg, E. G. [2 ]
Smirnov, V. A. [1 ]
Ageev, O. A. [1 ]
机构：
[1] Southern Fed Univ, Inst Nanotechnol Elect & Equipment Engn, Taganrog 347928, Russia
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117582, Singapore
来源：
INTERNATIONAL CONFERENCE PHYSICA.SPB/2019 | 2019年 / 1400卷
关键词：
LOCAL ANODIC-OXIDATION; NANOSTRUCTURES; OXIDE;
D O I：
10.1088/1742-6596/1400/5/055032
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Effect of resistive switching in TiO2 thin film was investigated. It was shown, resistive switching from high resistance state (HRS) to low resistance state (LRS) has occurred at 3.2 +/- 0.2 V, and from LRS to HRS at -2.8 +/- 0.5 V. Endurance test shown that HRS decreased from 42.31 +/- 5.26 kO to 26.45 +/- 6.14 kO, LRS increased from 2.25 +/- 1.15 kO to 3.45 +/- 1.18 kO. HRS/LRS coefficient has decreased from 18.8 to 7.6. Time-stability of TiO2 surface charge was investigated. It was shown, that voltage decreased from 320 +/- 21 to 22 +/- 5 mV during 90 minutes and square side increased from 3.43 +/- 0.12 to 4.12 +/- 0.14 mu m during 90 minutes. The results can be useful for neuromorphic systems manufacturing based on nanocrystalline TiO2 films.
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页数：4
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