Self-organized Ge quantum wires on Si(111) substrates

被引：2

作者：

Jin, G ^{[1
]}

Tang, YS ^{[1
]}

Liu, JL ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1999年 / 17卷 / 04期

关键词：

D O I：

10.1116/1.581828

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Self-organized Ge quantum wires have been grown on regular atomic steps formed along [(1) over bar 10] direction on Si(111) substrates by annealing at 870 degrees C in vacuum. The Samples have been studied by ex situ atomic force microscopy (AFM). Raman scattering and low temperature photoluminescence spectroscopy. The AFM results suggest that the mechanism of the formation of the wires be the evolution of self-organized lined-up quantum dots. Good quality Ge quantum wires have been formed and clear quantum confinement-induced quantization in the wires has been observed. (C) 1999 American Vacuum Society. [S0734-2101(99)00704-6].

引用

下载

页码：1406 / 1409

页数：4

共 50 条

[1] Growth and study of self-organized Ge quantum wires on Si(111) substrates
Jin, G
Tang, YS
Liu, JL
Wang, KL
APPLIED PHYSICS LETTERS, 1999, 74 (17) : 2471 - 2473
[2] Self-organized growth of microsized Ge wires on Si (111) surfaces
Xu, Zhangcheng
Zhang, Yating
Headrick, Randall L.
Zhou, Hua
Zhou, Lan
Fukamachi, Tomoe
PHYSICAL REVIEW B, 2007, 75 (23):
[3] Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates
Brunner, K
Zhu, J
Miesner, C
Abstreiter, G
Kienzle, O
Ernst, F
PHYSICA E, 2000, 7 (3-4): : 881 - 886
[4] Self-organized InAs quantum wires on GaAs (331)A substrates
Gong, Z
Fang, ZD
Miao, ZH
Niu, ZC
Feng, SL
CHINESE PHYSICS LETTERS, 2003, 20 (10) : 1819 - 1821
[5] Self-organized growth of Ge islands on Si(100) substrates
Pivac, B
Kovacevic, I
Dubcek, P
Radic, N
Bernstorff, S
Slaoui, A
THIN SOLID FILMS, 2006, 511 (153-156) : 153 - 156
[6] Optical properties of Ge self-organized quantum dots in Si
Physical Review B: Condensed Matter, 57 (15):
[7] Optical properties of Ge self-organized quantum dots in Si
Peng, CS
Huang, Q
Cheng, WQ
Zhou, JM
Zhang, YH
Sheng, TT
Tung, CH
PHYSICAL REVIEW B, 1998, 57 (15): : 8805 - 8808
[8] Metamorphosis of self-organized quantum dots into quantum wires
Liu, FQ
Wang, ZG
Xu, B
Wu, J
Qian, JJ
PHYSICS LETTERS A, 1998, 249 (5-6) : 555 - 559
[9] Research progress of self-organized Ge quantum dots on Si substrate
HUANG Changjun
Progress in Natural Science:Materials International, 2004, (05) : 14 - 21
[10] Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
Lozovoy, K. A.
Voytsekhovskiy, A. V.
Kokhanenko, A. P.
Satdarov, V. G.
Pchelyakov, O. P.
Nikiforov, A. I.
OPTO-ELECTRONICS REVIEW, 2014, 22 (03) : 171 - 177

← 1 2 3 4 5 →