Optical and Structural Properties of Al-Doped ZnO Thin Films by Sol Gel Process

被引:14
|
作者
Jun, Min-Chul [1 ]
Koh, Jung-Hyuk [1 ]
机构
[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea
关键词
Al-Doped ZnO; Transparent Conducting Oxide; Sol-Gel Process; Thin Films; ZINC-OXIDE FILMS; TRANSPARENT; TEMPERATURE; DEPOSITION; EMISSION; OXYGEN; RF;
D O I
10.1166/jnn.2013.7314
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Transparent conducting oxide (TCO) materials with high transmittance and good electrical conductivity have been attracted much attention due to the development of electronic display and devices such as organic light emitting diodes (OLEDs), and dye-sensitized solar cells (DSSCs). Aluminum doped zinc oxide thin films (AZO) have been well known for their use as TCO materials due to its stability, cost-effectiveness, good optical transmittance and electrical properties. Especially, AZO thin film, which have low resistivity of 2-4 x 10(-4) Omega . cm which is similar to that of ITO films with wide band gap semiconductors. The AZO thin films were deposited on glass substrates by sol-gel spin-coating process. As a starting material, zinc acetate dihydrate (Zn(CH3COO)(2)center dot 2H(2)O) and aluminum chloride hexahydrate (AlCl3 center dot 6H(2)O) were used. 2-methoxyethanol and monoethanolamine (MEA) were used as solvent and stabilizer, respectively. After deposited, the films were preheated at 300 degrees C on a hotplate and post-heated at 650 degrees C for 1.5 hrs in the furnace. We have studied the structural and optical properties as a function of Al concentration (0-2.5 mol.%).
引用
收藏
页码:3403 / 3407
页数:5
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