Effect of deep traps on sheet charge in AlGaN/GaN high electron mobility transistors

被引：12

作者：

Klein, PB

Binari, SC

Ikossi, K

Wickenden, AE

Koleske, DD

Henry, RL

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 25期

关键词：

D O I：

10.1049/el:20011040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The same traps that produce current collapse in AlGaN/GaN high electron mobility transistors are also shown to limit the sheet charge that is attainable in these devices by the trapping of channel carriers at equilibrium (no applied bias). In the present case. this reduction in sheet charge was found comparable to that induced by current collapse.

引用

页码：1550 / 1551

页数：2

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