Effect of deep traps on sheet charge in AlGaN/GaN high electron mobility transistors

被引：12

作者：

Klein, PB

Binari, SC

Ikossi, K

Wickenden, AE

Koleske, DD

Henry, RL

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 25期

关键词：

D O I：

10.1049/el:20011040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The same traps that produce current collapse in AlGaN/GaN high electron mobility transistors are also shown to limit the sheet charge that is attainable in these devices by the trapping of channel carriers at equilibrium (no applied bias). In the present case. this reduction in sheet charge was found comparable to that induced by current collapse.

引用

页码：1550 / 1551

页数：2

共 50 条

[21] Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress
Ma Xiao-Hua
Ma Ji-Gang
Yang Li-Yuan
He Qiang
Jiao Ying
Ma Ping
Hao Yue
[J]. CHINESE PHYSICS B, 2011, 20 (06)
[22] Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress
马晓华
马骥刚
杨丽媛
贺强
焦颖
马平
郝跃
[J]. Chinese Physics B, 2011, 20 (06) : 411 - 416
[23] Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy
Klein, PB
Mittereder, JA
Binari, SC
Roussos, JA
Katzer, DS
Storm, DF
[J]. ELECTRONICS LETTERS, 2003, 39 (18) : 1354 - 1356
[24] Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon
Roensch, Sebastian
Sizov, Victor
Yagi, Takuma
Murad, Saad
Groh, Lars
Lutgen, Stephan
Sickmoeller, Markus
Krieger, Michael
Weber, Heiko B.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 1180 - +
[25] Degradation characteristics of AlGaN/GaN high electron mobility transistors
Kim, H
Tilak, V
Green, BM
Cha, HY
Smart, JA
Shealy, JR
Eastman, LF
[J]. 39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001, 2001, : 214 - 218
[26] DC characteristics of AlGaN/GaN high electron mobility transistors
Inada, Masaki
Nakajima, Akira
Piao, Guanxi
Shimizu, Mitsuaki
Yano, Yoshiki
Ubukata, Akinori
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 2991 - +
[27] Electrothermal analysis of AlGaN/GaN high electron mobility transistors
Sridharan, Sriraaman
Venkatachalam, Anusha
Yoder, P. D.
[J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2008, 7 (03) : 236 - 239
[28] Traps and defects in pre- and post-stressed AlGaN GaN high electron mobility transistors
Sin, Yongkun
Foran, Brendan
Joh, Jungwoo
del Alamo, Jesus A.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (07): : 1611 - 1613
[29] Photoionization spectroscopy in AlGaN/GaN high electron mobility transistors
Klein, PB
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) : 5498 - 5502
[30] Reliability Issues in AlGaN/GaN High Electron Mobility Transistors
Douglas, E. A.
Liu, L.
Lo, C. F.
Gila, B. P.
Ren, F.
Pearton, S. J.
[J]. STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53), 2011, 41 (06): : 51 - 61

← 1 2 3 4 5 →