Characterizing the Reliability and Threshold Voltage Shifting of 3D Charge Trap NAND Flash

被引：0
|
作者：
Liu, Weihua [1 ]
Wu, Fei [1 ]
Zhang, Meng [1 ]
Wang, Yifei [1 ]
Lu, Zhonghai [2 ]
Lu, Xiangfeng [3 ]
Xie, Changsheng [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Wuhan, Hubei, Peoples R China
[2] KTH Royal Inst Technol, Stockholm, Sweden
[3] Beijing Memblaze Technol Co Ltd, Beijing, Peoples R China
来源：
2019 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE) | 2019年
基金：
中国国家自然科学基金;
关键词：
3D NAND Flash; Charge Trap; Reliability; Threshold Voltage Shifting;
D O I：
10.23919/date.2019.8714941
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
3D charge trap (CT) triple-level cell (TLC) NAND flash gradually becomes a mainstream storage component due to high storage capacity and performance, but introducing a concern about reliability. Fault tolerance and data management schemes are capable of improving reliability. Designing a more efficient solution, however, needs to understand the reliability characteristics of 3D CT TLC NAND flash. To facilitate such understanding, by exploiting a real-world testing platform, we investigate the reliability characteristics including the raw bit error rate (RBER) and the threshold voltage (Vth) shifting features after suffering from variable disturbances. We give analyses of why these characteristics exist in 3D CT TLC NAND flash. We hope these observations can guide the designers to propose high efficient solutions to the reliability problem.
引用
收藏
页码：312 / 315
页数：4
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