A new loadless 4-transistor SRAM cell with a 0.18 μm CMOS technology

被引：0

作者：

Yang, Jinshen ^{[1
]}

Chen, Li ^{[2
]}

机构：

[1] Tianjin Univ, Dept Commun Engn, Tianjin 300072, Peoples R China

[2] Univ Saskatchewan, Dept Elect & Comp Engn, Saskatoon, SK, Canada

来源：

2007 CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, VOLS 1-3 | 2007年

关键词：

SRAM cells; 4-T; high density; low-power;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

This paper introduces a new four transistor (4T) SRAM cell for very high density embedded SRAM applications. Compared to a 4T cell introduced previously, the new cells have the bitlines precharged to ground rather than Vdd. The cell is new stable operating at 1.8V. A comparative analysis of the new 4T cell with other 4T loadless SRAM cells and conventional 6T SRAM cells is performed. Using a 0.18 mu m CMOS technology, this cell consumes less power with less area.

引用

页码：538 / 541

页数：4

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