Self-heating Parameter Extraction of Power MOSFETs Based on Transient Drain Current Measurements and on the 2-cell Self-heating Model

被引：0

作者：

Koh, Risho ^{[1
]}

Iizuka, Takahiro ^{[1
]}

机构：

[1] RENESAS Elect, Technol Dev Unit, Nakahara Ku, Kawasaki, Kanagawa, Japan

来源：

2012 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-heating parameter extraction for circuit simulation model is discussed based on the transient drain current measurement, by using a 18V power MOSFET as a test device. The fitting errors in the conventional one-cell self-heating model have been investigated and the influences of the spread resistance on the transient current are discussed to refine the modeling strategy. A simple two-cell model is also proposed and its excellent fitting capability for wide time ranges is demonstrated.

引用

页码：191 / 195

页数：5

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