Stacking transformation and defect creation in Cs intercalated TiS2 single crystals

被引：20
|
作者：
Remskar, M
Popovic, A
Starnberg, HI [1 ]
机构：
[1] Univ Gothenburg, Dept Phys, SE-41296 Gothenburg, Sweden
[2] Chalmers Univ Technol, SE-41296 Gothenburg, Sweden
[3] Jozef Stefan Inst, SI-1000 Ljubljana, Slovenia
来源：
SURFACE SCIENCE | 1999年 / 430卷 / 1-3期
关键词：
caesium; defects; intercalation; TiS2; transition metal dichalcogenides;
D O I：
10.1016/S0039-6028(99)00442-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The intercalation of TiS2 single crystals with Cs was studied by transmission electron microscopy. Evidence was found for an intercalation induced 1T-->3R structure transformation. The Cs+ ions formed an a root 3 x a root 3 structure. In the thinnest parts of the crystals, the intercalation induced cracks and moire fringes. In thicker parts the 1T-->3R transformation was frustrated, with formation of intercalation ribbons and dislocation loops. Air exposure resulted in de-intercalation and oxidation of Cs. The results emphasise the connections between defects and intercalation. (C) 1999 Elsevier Science B.V. All rights reserved.
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收藏
页码：199 / 205
页数：7
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