Characterization of focused-ion-beam-induced damage in n-type silicon using Schottky contact

被引：11
|
作者：
Xia, L
Wu, WG [1 ]
Hao, YL
Wang, YY
Xu, J
机构：
[1] Peking Univ, Inst Microelect, Natl Key Lab Micro Nano Fabricat Technol, Beijing 100871, Peoples R China
[2] Peking Univ, Electron Microscopy Lab, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期
关键词：
D O I：
10.1063/1.2195109
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10-30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4x10(-4) Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes. (c) 2006 American Institute of Physics.
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