TEMPERATURE ANOMALIES OF SCHOTTKY-BARRIER DIODES ON N-TYPE SILICON

被引：5

作者：

JAGER, D ^{[1
]}

KASSING, R ^{[1
]}

机构：

[1] UNIV MUNSTER, INST APPL PHYS, D-4400 MUNSTER, GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.323401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4413 / 4414

页数：2

共 50 条

[1] SCHOTTKY-BARRIER CONTACTS OF TITANIUM NITRIDE ON N-TYPE SILICON
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[3] TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TUNGSTEN ON N-TYPE AND P-TYPE SILICON
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[4] RECIPROCITY IN SILICON SCHOTTKY-BARRIER DIODES
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[5] Characteristics of n-Type Asymmetric Schottky-Barrier Transistors with Silicided Schottky-Barrier Source and Heavily n-Type Doped Channel and Drain
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[7] SCHOTTKY-BARRIER ENHANCEMENT ON N-TYPE GAAS BY AS IMPLANTATION
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[8] SCHOTTKY-BARRIER BEHAVIOR OF COPPER AND COPPER SILICIDE ON N-TYPE AND P-TYPE SILICON
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[9] CHARGE COLLECTION IN N-TYPE GAAS SCHOTTKY-BARRIER DIODES STRUCK BY HEAVY ENERGETIC IONS
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[10] Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes
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