Results from Silicon Photo-Multiplier neutron irradiation test

被引:0
|
作者
Faccini, R. [1 ,2 ]
Pinci, D. [2 ]
Baldini, W. [3 ,4 ]
Calabrese, R. [3 ,4 ]
Cibinetto, G. [3 ,4 ]
Ramusino, A. Cotta [3 ,4 ]
Malaguti, R. [3 ,4 ]
Pozzati, M. [3 ,4 ]
Angelone, M. [5 ]
Pillon, M. [5 ]
机构
[1] Sapienza Univ Roma, Rome, Italy
[2] Ist Nazl Fis Nucl, Sez Roma, Rome, Italy
[3] Unversita Ferrara, Ferrara, Italy
[4] INFN Ferrara, Ferrara, Italy
[5] ENEA, Frascati, Italy
关键词
Silicon Photmultipliers; Neutron irradiation;
D O I
10.1142/9789814307529_0092
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
Silicon photo-multipliers, often called "SiPM", are semiconductor photon detectors built from a square matrix of avalanche photo-diodes on common silicon substrate. SiPM have been proposed for several different applications in High Energy Physics, in particular where a large detection granularity and a high photon detection efficiency is needed. In this paper the results of a radiation hardness test performed at the Frascati Neutron Generator are presented. Several SiPMs of different manufacturers have been irradiated integrating up to 7x10(10) 1-MeV-equivalent neutrons per cm(2). For the first time, their performance have been recorded during the neutron irradiation and a gradual deterioration of their properties was found to happen already after an integrated dose of the order of 108 1-MeV-equivalent neutrons per cm(2).
引用
收藏
页码:555 / 559
页数:5
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